dcr690g52 phase control thyristor ds5830 - 4 august 2 014 (ln 31837 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repet itive peak voltages v drm and v rrm v conditions dcr690g52* dcr690g50 dcr690g48 5200 5000 4800 t vj = - 40c to 125c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. * 5000v @ - 40 0 c, 5200v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr690g52 note: please use the complete part number when ordering and quote this number in any future co rrespondence relating to your order. key parameters v drm 5200v i t(av) 690a i tsm 9450a dv/dt* 1500v/s di/dt 300a/us * higher dv/dt selections available outline type code: g (see package details for further information) fig. 1 package out line
semiconductor dcr690g52 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 690 a i t(rms) rms value - 1084 a i t continuous (direct) on - state current - 1050 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 9.45 ka i 2 t i 2 t for fusing v r = 0 0.45 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0268 c/w single side cooled anode dc - 0.0527 c/w cathode dc - 0.0652 c/w r th(c - h) thermal resistance C case to heatsink clamping force 11.5kn double side - 0.0072 c/w (with mounting compound) single side - .0144 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 10 13 kn
semiconductor dcr690g52 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 100 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 150 a/s gate source 30v, 10 ? , non - repetitive - 300 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 100a to 380a at t case = 125c - .9 v threshold voltage C high level 380a to 3000a at t case = 125c - 1.075 v r t on - state slope resistance C low level 100a to 380a at t case = 125c - 1.618 m ? on - state slope resistance C high level 380a to 3000a at t case = 125c - 1.125 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 5a/ s, 400 800 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt = 5a/s, 1200 2400 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr690g52 4 / 10 www.dynexsemi.com gate tri gger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger curren t v drm = 5v, t case = 25c 3 50 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.246536 b = 0.166331 v tm = a + bln ( i t ) + c.i t +d. ? i t c = 0.001110 d = - 0.008349 these values are valid for t j = 125c for i t 50a to 3000a 0 1000 2000 3000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) 25c min 25c max 125c min 125c max
semiconductor dcr690g52 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, d ouble side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 500 1000 1500 2000 2500 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr690g52 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 0.001 0.01 0.1 1 10 100 time ( s ) themal impedance z th(j-c) ( c /kw ) double side cooled anode cooled cathode cooled 1 2 3 4 double side cooled r i (c/kw) 2.2995 5.4226 16.9074 2.1488 t i (s) 0.0066401 0.0457025 0.4962482 1.8248 anode side cooled r i (c/kw) 2.3214 5.2661 10.2686 34.8031 t i (s) 0.0066948 0.045528 0.3484209 4.582 cathode side cooled r i (c/kw) 2.4895 5.9105 7.4256 49.3432 t i (s) 0.0070404 0.052895 0.3933903 4.2295 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 4.15 2.72 180 4.15 2.72 180 4.13 2.71 120 4.90 4.02 120 4.89 4.02 120 4.87 4.00 90 5.74 4.79 90 5.73 4.78 90 5.69 4.76 60 6.53 5.65 60 6.52 5.65 60 6.46 5.60 30 7.16 6.64 30 7.15 6.62 30 7.07 6.56 15 7.46 7.18 15 7.44 7.16 15 7.36 7.09
semiconductor dcr690g52 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge vs di /dt fig.13 reverse recovery current vs di /dt 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 stored charge , qs - (uc) rate of decay of on - state current, di/dt - (a/us) q s max = 2169.6*(di/dt) 0.4052 q s typical = 1512.8*(di/dt) 0.4826 conditions: tj = 125 c, v peak ~ 3200v vrm ~ 2600v snubber as appropriate to control reverse voltage 0 50 100 150 200 250 300 0 5 10 15 20 reverse recovery current, irr - (a) rate of decay of on - state current, di/dt - (a/us) i rrmax = 38.391*(di/dt) 0.6454 i rrtypical = 31.453 *(di/dt) 0.691 conditions: tj = 125 c, v peak ~ 3200v vrm ~ 2600v snubber as appropriate to control reverse voltage
semiconductor dcr690g52 8 / 10 www.dynexsemi.com fig1 4 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c
semiconductor dcr690g52 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. clamping force: 11.5 kn 10% lead length: 420mm le ad terminal connector: m4 ring package outline type code: g fig.1 6 package outline device maximum thickness (mm) minimum thickness (mm) dcr803sg18 26.415 25.865 dcr806sg28 26.49 25.94 dcr818sg48 26.84 26.17 dcr820sg65 27.1 26.55 dcr1080g22 26.415 25.865 dcr960g28 26.49 25.94 dcr780g42 26.72 26.17 dcr690g52 26.84 26.29 dcr590g65 27.1 26.55 dcr470g85 27.46 26.91
semiconductor dcr690g52 10 / 10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user mu st evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be ne eded please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of any kind. thi s publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when ope rating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric cha rge remaining in the product must be dis charged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotation s are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. provisional information: some initial development work has been performed. the datasheet represents a view of the end product based on very limited information. certain details will change. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datas heet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet pr evailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical doc umentation C not for resale .
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